The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Feb. 27, 2018
Toshiba Memory Corporation, Tokyo, JP;
Takeshi Sugimoto, Yokohama Kanagawa, JP;
Takayuki Miyazaki, Tokyo, JP;
Yuki Inuzuka, Kawasaki Kanagawa, JP;
TOSHIBA MEMORY CORPORTION, Tokyo, JP;
Abstract
A semiconductor memory device includes a memory cell array with bit lines and word lines connected thereto. A first power supply circuit generates a selected bit line voltage. A second power supply circuit generates a non-selected bit line voltage. A third power supply circuit generates a selected word line voltage. A fourth power supply circuit generates a non-selected word line voltage. A first decoder connects the selected bit line to the first power supply circuit and connects the non-selected bit line to the second power supply circuit. A second decoder connects the selected word line to the third power supply circuit and connects the non-selected word line to the fourth power supply circuit. A capacitive element is between a first node that is between the second power supply circuit and the first decoder and a second node that is between the third power supply circuit and the second decoder.