The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Aug. 29, 2016
Applicant:

Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventor:

Taehee Lee, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G06K 9/00 (2006.01); H01L 31/0224 (2006.01); H01L 31/0216 (2014.01); A61B 5/00 (2006.01); A61B 5/117 (2016.01); G06K 9/20 (2006.01); H02S 40/44 (2014.01);
U.S. Cl.
CPC ...
G06K 9/00892 (2013.01); A61B 5/117 (2013.01); A61B 5/489 (2013.01); A61B 5/6817 (2013.01); G06K 9/0004 (2013.01); G06K 9/209 (2013.01); G06K 9/2018 (2013.01); H01L 27/1461 (2013.01); H01L 27/14616 (2013.01); H01L 27/14623 (2013.01); H01L 27/14645 (2013.01); H01L 27/14678 (2013.01); H01L 31/02164 (2013.01); H01L 31/022416 (2013.01); H02S 40/44 (2014.12); A61B 2562/0209 (2013.01); A61B 2562/0233 (2013.01); A61B 2562/0238 (2013.01); A61B 2562/06 (2013.01); G06K 2009/00932 (2013.01);
Abstract

A photosensitive thin film device includes a substrate that is transparent and insulative; a first electrode on the substrate; a circular semiconductor layer on the substrate and surrounding a perimeter of the first electrode; a circular second electrode on the substrate and surrounding a perimeter of the semiconductor layer; an interlayer insulating layer on the semiconductor layer and the first and second electrodes and having a first aperture exposing the first electrode; and a conductive layer including an upper surface light barrier arranged on the interlayer insulating layer and covering an upper surface of the semiconductor layer, and a contact plug extending from the upper surface light barrier and connected to the first electrode via the first aperture.


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