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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10416563 B1

PDFFull Text
Date of Patent:
Sep. 17, 2019

Filed:

Mar. 08, 2018

Resist underlayer film composition, patterning process, and method for forming resist underlayer film

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Hironori Satoh, Joetsu, JP;

Hiroko Nagai, Joetsu, JP;

Takeru Watanabe, Joetsu, JP;

Daisuke Kori, Joetsu, JP;

Tsutomu Ogihara, Joetsu, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Zandra V Smith

Assistant Examiner:

Andre C Stevenson

Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/09 (2006.01); C07C 39/14 (2006.01); C07C 39/17 (2006.01); C07C 69/94 (2006.01); C07D 251/32 (2006.01); C07D 487/04 (2006.01); C08F 220/28 (2006.01); C08F 220/32 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); H01L 21/266 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C07C 39/14 (2013.01); C07C 39/17 (2013.01); C07C 69/94 (2013.01); C07D 251/32 (2013.01); C07D 487/04 (2013.01); C08F 220/28 (2013.01); C08F 220/32 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); G03F 7/16 (2013.01); G03F 7/168 (2013.01); G03F 7/2041 (2013.01); G03F 7/322 (2013.01); G03F 7/38 (2013.01); H01L 21/266 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31133 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); C07C 2603/18 (2017.05); C08F 2220/281 (2013.01); C08F 2800/20 (2013.01);
Abstract

A resist underlayer film composition is excellent in resistance to a basic hydrogen peroxide aqueous solution in gap-filling and planarization characteristics having a dry etching characteristic; a patterning process and method for forming a resist underlayer film, wherein the resist underlayer film composition is used for a multilayer resist method, the composition comprising: (a1) one, or two or more, of a compound represented by following general formula (x); and (b) an organic solvent, wherein nrepresents an integer of 1 to 10; when nis 2, w represents a sulfinyl group, a sulfonyl group, an ether group, or a divalent organic group having 2 to 50 carbon atoms; when nis an integer other than 2, w represents an n-valent organic group having 2 to 50 carbon atoms; and y represents a single bond or divalent connecting group having 1 to 10 carbon atoms and optionally having an oxygen atom.

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