logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10415153 B1

PDFFull Text
Date of Patent:
Sep. 17, 2019

Filed:

Mar. 31, 2015

Doped rare earth nitride materials and devices comprising same

Applicants:

Franck Natali, Wellington, NZ;

Benjamin John Ruck, Wellington, NZ;

Harry Joseph Trodahl, Upper Moutere, NZ;

Stephane Ange Vezian, Valbonne, FR;

Inventors:

Franck Natali, Wellington, NZ;

Benjamin John Ruck, Wellington, NZ;

Harry Joseph Trodahl, Upper Moutere, NZ;

Stephane Ange Vezian, Valbonne, FR;

Assignee:

Other;

Attorney:

Maschoff Brennan

Primary Examiner:

Haidung D Nguyen

Int. Cl.
CPC ...
C30B 29/38 (2006.01); C23C 14/06 (2006.01); C23C 16/30 (2006.01); C30B 23/06 (2006.01); C30B 23/02 (2006.01); C30B 25/02 (2006.01); H01L 21/02 (2006.01); C23C 14/28 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
C30B 23/066 (2013.01); C23C 14/0641 (2013.01); C23C 14/28 (2013.01); C30B 23/02 (2013.01); C30B 23/025 (2013.01); C30B 25/02 (2013.01); C30B 29/38 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02192 (2013.01); H01L 21/02269 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02439 (2013.01); H01L 21/02521 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02631 (2013.01); H01L 29/24 (2013.01);
Abstract

Disclosed herein are magnesium-doped rare earth nitride materials, some of which are semi-insulating or insulating. Also disclosed are methods for preparing the materials. The magnesium-doped rare earth nitride materials may be useful in the fabrication of, for example, spintronics, electronic and optoelectronic devices.

Find Patent Forward Citations

Quick Actions:

Natali, Franck. (2019). Doped rare earth nitride materials and devices comprising same (U.S. Patent No. 10415153). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10415153

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…