The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Apr. 21, 2016
Applicant:

Schmid Silicon Technology Gmbh, Freudenstadt, DE;

Inventors:

Christian Schmid, Freudenstadt, DE;

Georgij Petrik, Böblingen, DE;

Jochem Hahn, Rottenburg am Neckar, DE;

Assignee:

Schmid Silicon Technology GmbH, Freudenstadt, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/035 (2006.01); C01B 33/029 (2006.01);
U.S. Cl.
CPC ...
C01B 33/035 (2013.01); C01B 33/029 (2013.01);
Abstract

A method that decomposes monosilane wherein a monosilane-containing gas stream is circulated in a circuit system including a reactor that decomposes the monosilane, the method including injecting a monosilane-containing gas stream into the reactor, bringing the gas stream into contact with a heated surface inside the reactor at which surface a portion of the monosilane in the gas stream is decomposed to deposit a solid silicon layer on the surface so that the concentration of the monosilane in the gas stream decreases, discharging the gas stream from the reactor, reprocessing the gas stream including at least partially compensating the decrease in the monosilane concentration resulting from the decomposition by addition of monosilane, and reinjecting the reprocessed, monosilane-containing gas stream into the reactor, wherein during deposition an operating pressure of 2.5 to 10 bar is established and the gas stream enters the reactor at a velocity of less than 7.5 m/s.


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