Nitride semiconductor light-emitting element base and manufacturing method thereof

Abstract

To prevent degradation of electrical characteristics caused by a resin filled between electrodes in an ultraviolet light-emitting operation, the present invention provides a basethat comprises an insulating base materialand two or more metal filmsandthat are formed on one side of the insulating base materialand electrically separated from each other. The two or more metal films are formed to include an upper surface and a side wall surface that are covered by gold or a platinum group metal, to be capable of mounting thereon one or more nitride semiconductor light-emitting elements and the like, and to have, as a whole, a predetermined planar view shape including two or more electrode pads. On the one side of the base material, along a boundary line between an exposed surface of the base materialthat is not covered by the metal filmand a side wall surface of the metal film, at least a first part of the exposed surface of the base materialcontinuous with the boundary line that is sandwiched between two adjacent electrode pads and the side wall surfaces of the metal filmsandthat oppose to each other with the first part interposed therebetween are covered by a fluororesin film, and a part of an upper surface of the metal filmthat composes at least the electrode pad is not covered by the fluororesin film