The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Oct. 28, 2014
Infineon Technologies Ag, Neubiberg, DE;
Cristian Mihai Boianceanu, Bucharest, RO;
Dan-Ionut Simon, Bucharest, RO;
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Abstract
Thermo-migration induced stress in power devices can be mitigated by deactivating a subset of power device components (e.g., transistors, etc.) when the power device experiences a high stress condition. Deactivating the subset of power device components serves to bifurcate the active area of the power switching device into smaller active regions, which advantageously changes the temperature gradients in the active area/regions. In some embodiments, a control circuit dynamically deactivates different subsets of power device components to shift the thermo-migration induced stress points to different portions of the active region over the lifetime of the power switching device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile