The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Nov. 14, 2017
Solantro Semiconductor Corp., Ottawa, CA;
Christian Cojocaru, Ottawa, CA;
Igor Miletic, Ottawa, CA;
Tudor Lipan, Ottawa, CA;
Michael Sawires, Ottawa, CA;
SOLANTRO SEMICONDUCTOR CORP., Ottawa, CA;
Abstract
A Galvanically Isolated Amplifier (GIA) includes an isolation barrier to galvanically isolate high voltage circuitry from low voltage circuitry. The high voltage circuitry has at least two voltage supply rails, with the voltage supply rail closest to ground potential at a first potential relative to the ground potential. The low voltage circuitry has at least two voltage supply rails, with the voltage supply rail closest to the ground potential at a second potential, the second potential being smaller than the first potential. A Radio Frequency (RF) carrier is digitally Phase Shift Keying (PSK) modulated for transmission across the isolation barrier. The unmodulated RF carrier could also be transmitted across the isolation barrier. PSK modulation could be applied to the RF carrier based on a test waveform to generate a PSK-modulated test signal for transmission while a voltage transient is applied between the high voltage circuitry and the low voltage circuitry.