The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Mar. 27, 2015
Dai Nippon Printing Co., Ltd., Tokyo, JP;
Aki Kimura, Tsukuba, JP;
Katsuya Sakayori, Fujimono, JP;
Kei Amagai, Tsukuba, JP;
Satoru Kanke, Tsukuba, JP;
Toshiyuki Sakai, Tsukubamirai, JP;
Toshimasa Takarabe, Tokyo, JP;
Makoto Mizoshiri, Tsukuba, JP;
DAI NIPPON PRINTING CO., LTD., Tokyo, JP;
Abstract
A semiconductor light-emitting device including at least a substrate, a reflector having a concave cavity, and an optical semiconductor element, wherein the reflector is formed of a resin composition containing an inorganic substance; in a spectrum obtained when the reflector is measured by an X-ray diffraction method using CuKα radiation (wavelength=1.5418 A), an intensity ratio (P1/P2) of a peak intensity P1 of the highest intensity diffraction peak in a range of diffraction angle 2θ of 0° to 24° to the peak intensity P2 of the highest intensity diffraction peak in a range of diffraction angle 2θ of more than 24° to 70° is 0.01 or more and 1.0 or less; and an ash content of the reflector is 60% by mass or more. A semiconductor light-emitting device and an optical-semiconductor-mounting substrate, including a reflector having an extremely high light reflection property and excellent dimensional stability.