The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Apr. 29, 2016
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Sonja Tragl, Augsburg, DE;

Dominik Eisert, Regensburg, DE;

Stefan Lange, Augsburg, DE;

Nils Kaufmann, Regensburg, DE;

Alexander Martin, Regensburg, DE;

Krister Bergenek, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); C09K 11/77 (2006.01); A61B 1/06 (2006.01); H01L 33/48 (2010.01); H01L 33/58 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/502 (2013.01); A61B 1/0653 (2013.01); A61B 1/0661 (2013.01); C09K 11/77 (2013.01); H01L 33/50 (2013.01); H01L 33/505 (2013.01); H01L 33/486 (2013.01); H01L 33/58 (2013.01); H01L 33/62 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8592 (2013.01); H01L 2924/181 (2013.01); H01L 2933/0041 (2013.01);
Abstract

A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGaO, AGaO, AEGaO, LnGaGeO, GaO, LnGaDOor MgDO, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.


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