The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Aug. 23, 2016
Seoul Viosys Co., Ltd., Ansan-si, KR;
Jin Woong Lee, Ansan-si, KR;
Chan Seob Shin, Ansan-si, KR;
Keum Ju Lee, Ansan-si, KR;
Seom Geun Lee, Ansan-si, KR;
Myoung Hak Yang, Ansan-si, KR;
Jacob J. Richardson, Santa Barbara, CA (US);
Evan C. O'Hara, Santa Barbara, CA (US);
SEOUL VIOSYS CO., LTD., Ansan-si, KR;
Abstract
A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arc sec.