The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Oct. 23, 2018
Applicant:
Elenion Technologies, Llc, New York, NY (US);
Inventors:
Assignee:
Elenion Technologies, LLC, New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/028 (2006.01); H01L 31/0352 (2006.01); H01L 31/0232 (2014.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/035281 (2013.01); H01L 31/107 (2013.01); H01L 31/1804 (2013.01); Y02E 10/50 (2013.01);
Abstract
A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.