The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Feb. 12, 2015
Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventors:

Naoki Asano, Sakai, JP;

Takeshi Hieda, Sakai, JP;

Chikao Okamoto, Sakai, JP;

Yuta Matsumoto, Sakai, JP;

Kenichi Higashi, Sakai, JP;

Hiroaki Shigeta, Sakai, JP;

Assignee:

SHARP kABUSHIKI KAISHA, Sakai, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/056 (2014.01); H01L 31/0224 (2006.01); H01L 31/0747 (2012.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 31/056 (2014.12); H01L 31/02363 (2013.01); H01L 31/022441 (2013.01); H01L 31/0747 (2013.01); Y02E 10/52 (2013.01);
Abstract

Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.


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