The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Nov. 28, 2016
Applicant:
Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;
Inventor:
Tomomitsu Risaki, Chiba, JP;
Assignee:
ABLIC Inc., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 27/11521 (2017.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/265 (2006.01); H01L 27/11524 (2017.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7883 (2013.01); H01L 21/26586 (2013.01); H01L 27/11521 (2013.01); H01L 27/11524 (2013.01); H01L 29/0653 (2013.01); H01L 29/42344 (2013.01); H01L 29/66795 (2013.01); H01L 29/66825 (2013.01); H01L 29/7851 (2013.01); H01L 29/785 (2013.01);
Abstract
Provided is a semiconductor device, which prevents unnecessary voltage drop in a MOS transistor that is connected in series in a location between a booster circuit and a memory main body portion, to thereby operate on a low voltage and improve the ON/OFF ratio so that chip size shrinking and memory performance improvement are accomplished simultaneously. In a semiconductor memory device including a memory transistor portion and a select transistor portion, at least the select transistor portion is formed of a fin-shaped single-crystal semiconductor thin film.