The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Mar. 23, 2018
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Min-Cheol Kim, Goyang-si, KR;

Youn-Gyoung Chang, Goyang-si, KR;

Kwon-Shik Park, Seoul, KR;

So-Hyung Lee, Goyang-si, KR;

Ho-Young Jung, Paju-si, KR;

Ha-Jin Yoo, Paju-si, KR;

Jeong-Suk Yang, Asan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/477 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/02667 (2013.01); H01L 21/477 (2013.01); H01L 29/1033 (2013.01); H01L 29/66969 (2013.01);
Abstract

A display device includes a gate electrode on a substrate of a semiconductor device, a gate insulating film over the gate electrode, an active layer comprising an oxide including indium, zinc and gallium on the gate insulating film, and overlapping the gate electrode, and a source electrode and a drain electrode that are spaced apart from each other, wherein the active layer is formed from a zinc-rich target material, and an atomic % ratio of indium, zinc and gallium in the active layer is different from an atomic % ratio of the zinc-rich target material.


Find Patent Forward Citations

Loading…