The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Feb. 19, 2018
Applicant:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Inventors:
Chan Kyung Choi, Woodbury, MN (US);
Mihir Tungare, Roseville, MN (US);
Peter Wook Kim, Stillwater, MN (US);
Assignee:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7783 (2013.01); H01L 29/06 (2013.01); H01L 29/10 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01);
Abstract
A semiconductor structure includes a substrate, a III-Nitride intermediate stack including the protrusion propagation body situated over the substrate, a transition body over the III-Nitride intermediate stack, a III-Nitride buffer layer situated over the transition body, and a III-Nitride device fabricated over the group III-V buffer layer. The protrusion propagation body includes at least a protrusion generating layer and two or more protrusion spreading multilayers.