The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

May. 24, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jee Yong Kim, Hwaseong-si, KR;

Jung Hwan Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 29/06 (2006.01); H01L 27/11573 (2017.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 27/1157 (2017.01); H01L 27/11578 (2017.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 27/1157 (2013.01); H01L 27/11573 (2013.01); H01L 29/42344 (2013.01); H01L 29/6656 (2013.01); H01L 27/11578 (2013.01);
Abstract

A semiconductor device includes a substrate including a recess, the recess being positioned below an isolation region and having a side portion including a plurality of stepped portions, a plurality of gate electrodes spaced apart from each other on the substrate, and stacked in a direction perpendicular to an upper surface of the substrate, a channel structure passing between a first set of the plurality of gate electrodes, and the isolation region passing between a second set of the plurality of gate electrodes, the isolation region extending from the upper surface of the substrate and having an inclined lateral surface.


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