The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Sep. 30, 2016
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Sophie Bernasconi, Laval, FR;
Christelle Charpin-Nicolle, Fontanil-Cornillon, FR;
Anthony De Luca, Claix, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 45/04 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01);
Abstract
A method for manufacturing a memory cell includes forming a stack of layers comprising a first electrode and a dielectric layer, and forming a second electrode. Forming the second electrode includes depositing the second electrode on the dielectric layer, and defining the contour of the second electrode in such a way that the second electrode forms a protruding element above the dielectric layer having inclined flanks, the angle between the flanks of the second electrode forming an acute angle with the plane wherein the dielectric layer mainly extends.