The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Aug. 22, 2018
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Tsuneo Inaba, Kamakura Kanagawa, JP;

Hiroyuki Takenaka, Kamakura Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); G11C 5/06 (2006.01); G11C 5/02 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2454 (2013.01); G11C 5/025 (2013.01); G11C 5/063 (2013.01); G11C 13/0002 (2013.01); H01L 27/2481 (2013.01);
Abstract

A semiconductor storage device includes a global bit line extending in a horizontal direction, a select transistor provided on the global bit line and including a first terminal connected to the global bit line, a bit line provided on the select transistor, extending in a vertical direction, and connected to a second terminal of the select transistor, a plurality of word lines and insulating layers that are stacked alternately in a vertical direction, a first variable resistance layer between one of the plurality of word lines and a first side surface of the bit line, a plurality of dummy word lines and insulating layers that are stacked alternately in the vertical direction and disposed at the same level as the plurality of word lines, and a second variable resistance layer between the plurality of dummy word lines and a second side surface of the bit line.


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