The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Jun. 20, 2017
Omnivision Technologies, Inc., Santa Clara, CA (US);
Dajiang Yang, San Jose, CA (US);
Oray Orkun Cellek, Santa Cruz, CA (US);
Duli Mao, Sunnyvale, CA (US);
Xianfu Cheng, Sunnyvale, CA (US);
Xin Wang, San Jose, CA (US);
Bill Phan, San Jose, CA (US);
Dyson Tai, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
A single-exposure high dynamic range (HDR) image sensor includes a first photodiode and a second photodiode, with a smaller full-well capacity than the first photodiode, disposed in a semiconductor material. The image sensor also includes a first floating diffusion disposed in the semiconductor material and a first transfer gate coupled to the first photodiode to transfer first image charge accumulated in the first photodiode into the first floating diffusion. A second floating diffusion is disposed in the semiconductor material and a second transfer gate is coupled to the second photodiode to transfer second image charge accumulated in the second photodiode into the second floating diffusion. An attenuation layer is disposed between the second photodiode and image light directed towards the single-exposure HDR image sensor to block a portion of the image light from reaching the second photodiode.