The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Dec. 20, 2017
Canon Kabushiki Kaisha, Tokyo, JP;
Tsutomu Tange, Yokohama, JP;
Yukinobu Suzuki, Koza-gun, JP;
Aiko Kato, Machida, JP;
Koji Hara, Ichikawa, JP;
Takehito Okabe, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.