The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

May. 25, 2017
Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventors:

Songshan Li, Guangdong, CN;

Yuan-Jun Hsu, Guangdong, CN;

Zhaosong Liu, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/425 (2006.01); H01L 27/12 (2006.01); H01L 29/08 (2006.01); H01L 21/426 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); H01L 21/426 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/0847 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01);
Abstract

This disclosure discloses an array substrate and a manufacturing method, and a display device, the array substrate including: a channel layer; a gate insulating layer including a first portion and a second portion connected side by side, arranged on the channel layer, and exposing a source and drain contact zone on the channel layer, the second portion of the gate insulating layer being located on both sides of the first portion of the gate insulating layer; a gate layer, disposed on the first portion of the gate insulating layer; and a source and a drain, correspondingly connected to the contact region of the source and drain of the channel layer respectively. The array substrate of this disclosure solves the array substrate leakage problem caused by conductorizing the channel layer due to performing ion implantation to the channel layer.


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