The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Aug. 04, 2017
Applicant:

Semtech Corporation, Camarillo, CA (US);

Inventors:

Kok Khoon Ho, San Jose, CA (US);

Jonathan Clark, Camarillo, CA (US);

John MacLeod, Invergordon, GB;

Assignee:

Semtech Corporation, Camarillo, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 21/60 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 21/02118 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 23/3114 (2013.01); H01L 23/49827 (2013.01); H01L 24/03 (2013.01); H01L 24/27 (2013.01); H01L 24/13 (2013.01); H01L 24/81 (2013.01); H01L 24/97 (2013.01); H01L 2021/60007 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/13184 (2013.01); H01L 2224/94 (2013.01); H01L 2224/95001 (2013.01); H01L 2224/95136 (2013.01); H01L 2224/97 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device includes a semiconductor wafer. A plurality of pillar bumps is formed over the semiconductor wafer. A solder is deposited over the pillar bumps. The semiconductor wafer is singulated into a plurality of semiconductor die after forming the pillar bumps while the semiconductor wafer is on a carrier. An encapsulant is deposited around the semiconductor die and pillar bumps while the semiconductor die remains on the carrier. The encapsulant covers an active surface of the semiconductor die between the pillar bumps.


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