The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Dec. 06, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventor:
Reinhold Bayerer, Reichelsheim, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/538 (2006.01); H01L 23/498 (2006.01); H01L 23/50 (2006.01); H01L 21/768 (2006.01); H01L 23/367 (2006.01); H01L 23/34 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); H01L 21/76838 (2013.01); H01L 21/76877 (2013.01); H01L 23/3737 (2013.01); H01L 23/49811 (2013.01); H01L 23/49894 (2013.01); H01L 23/50 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/48 (2013.01); H01L 23/34 (2013.01); H01L 23/3672 (2013.01); H01L 23/3677 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48105 (2013.01); H01L 2224/48155 (2013.01); H01L 2224/48225 (2013.01);
Abstract
Power semiconductor packages described herein each include a substrate having two or more metal layers and one or more insulating layers for separating the metal layers. The substrate insulating layers are formed from a polymer material to reduce the CTE mismatch between the substrate metal layers and the substrate insulating layers.