The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Feb. 03, 2016
Applicant:
Hitachi, Ltd., Tokyo, JP;
Inventor:
Akitoyo Konno, Tokyo, JP;
Assignee:
HITACHI, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/36 (2006.01); H01L 23/48 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 23/36 (2013.01); H01L 23/3735 (2013.01); H01L 23/48 (2013.01); H01L 24/16 (2013.01); H01L 24/37 (2013.01); H01L 24/40 (2013.01); H01L 25/07 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/40225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92147 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/13091 (2013.01);
Abstract
Provided is a semiconductor device with high reliability. In order to solve the above problems, according to the present invention, the semiconductor device includes a heat dissipating substrate, an insulating substrate arranged on the heat dissipating substrate and having a wiring layer, a plurality of semiconductor elements arranged on the insulating substrate, a conductive block electrically connected to a front surface electrode of the semiconductor element, and a terminal electrode, in which the conductive block has a convex portion, and the convex portion is bonded to the insulating substrate.