The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Jul. 16, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jang Ik Park, Suwon-si, KR;

Bong Seok Kim, Seongnam-si, KR;

Souk Kim, Seoul, KR;

Yu Sin Yang, Seoul, KR;

Soo Seok Lee, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/66 (2006.01); H01L 21/762 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); H01L 21/76224 (2013.01); H01L 21/78 (2013.01);
Abstract

A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal. The method may include determining whether the representative value and the distribution value are within predetermined ranges respectively; and performing a following step of manufacturing the semiconductor device when the representative value and the distribution value are within respective predetermined ranges.


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