The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Feb. 23, 2017
Applicant:

Nxp B.v., Eindhoven, NL;

Inventor:

Hartmut Buenning, Hamburg, DE;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/561 (2013.01); H01L 21/6836 (2013.01); H01L 23/293 (2013.01); H01L 23/3114 (2013.01); H01L 24/94 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01);
Abstract

A method of manufacturing a device with six-sided protected walls is disclosed. The method includes fabricating the plurality of devices on a wafer, forming a plurality of contact pads on each of the plurality of devices, cutting a first trench around each of the plurality of devices from a backside of the wafer with an active side having a plurality of contact pads facing down, applying a protective coating on the backside of the wafer thus filling the first trench with a protective material of the protective coating on the backside and cutting a second trench from the active side. The second trench extends to end of the first trench; The method further includes applying a protective layer on the active side including filling the second trench with the material of the protective coating on the active side thus making a wall through a combination of the first trench and the second trench, the wall fully filled with the material of the protective layer on the backside and the protective layer on the active side and singulating each of the plurality of devices by cutting through the wall substantially in middle across a thickness of the wafer.


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