The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Oct. 18, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Yeong-Shin Park, Seoul, KR;
Young-Jae Kim, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A method of fabricating a wiring structure for a semiconductor device may include forming a lower wiring in a lower insulating layer, forming an etch stop layer covering the lower insulating layer and the lower wiring, forming an interlayer insulating layer on the etch stop layer, forming a preliminary via-hole through the interlayer insulating layer, partially etching the interlayer insulating layer to form a trench partially merged with the preliminary via-hole and a via-hole defined by a remaining portion of the preliminary via-hole, removing the etch stop layer exposed by the via-hole to expose the lower wiring, partially etching a contact area at which the trench and the via-hole are in contact with each other and forming an upper wiring in the via-hole and the trench to be electrically connected to the lower wiring.