The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Aug. 21, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jiseok Hong, Yongin-si, KR;
Kiseok Lee, Hwaseong-si, KR;
Jemin Park, Suwon-si, KR;
Yoosang Hwang, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/7682 (2013.01); H01L 21/76835 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 23/5222 (2013.01);
Abstract
A semiconductor device includes an interlayer insulation layer on a semiconductor substrate, a via plug and a wiring line on the via plug, in the interlayer insulation layer, the via plug and the wiring line coupled with each other and forming a stepped structure. The semiconductor device includes a first air-gap region between the interlayer insulation layer and the via plug, and a second air-gap region between the interlayer insulation layer and the wiring line. The first air-gap region and the second air-gap region are not vertically overlapped with each other.