The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Jan. 16, 2018
Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Chen-ke Hsu, Xiamen, CN;

Jiali Zhuo, Xiamen, CN;

Xiaojuan Shao, Xiamen, CN;

Jiansen Zheng, Xiamen, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); H01L 21/67 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); G01R 31/28 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67288 (2013.01); G01R 31/2887 (2013.01); H01L 22/34 (2013.01); H01L 24/00 (2013.01); H01L 21/6838 (2013.01); H01L 22/14 (2013.01);
Abstract

A transfer device for micro element with a test circuit can test the micro element during transfer. The transfer device for micro elements includes: a base substrate, having two surfaces opposite to each other; a pick-up head array, formed over the first surface of the base substrate for picking up or releasing the micro element; a test circuit set inside or/on the surface of the base substrate, which has a series of sub-test circuits, each sub-test circuit at least having two test electrodes for simultaneous test of photoelectric parameters of the micro element when the transfer device transfers the micro element.


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