The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

May. 02, 2018
Applicant:

Samsung Electronics Co. , Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Yoon-Hae Kim, Suwon-si, KR;

Hwa-Sung Rhee, Seongnam-si, KR;

Keun-Hwi Cho, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H01L 21/76897 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 27/0886 (2013.01);
Abstract

A semiconductor device includes a gate structure extending in a second direction on a substrate, a source/drain layer disposed on a portion of the substrate adjacent the gate structure in a first direction crossing the second direction, a first conductive contact plug on the gate structure, and a second contact plug structure disposed on the source/drain layer. The second contact plug structure includes a second conductive contact plug and an insulation pattern, and the second conductive contact plug and the insulation pattern are disposed in the second direction and contact each other. The first conductive contact plug and the insulation pattern are adjacent to each other in the first direction. The first and second conductive contact plugs are spaced apart from each other.


Find Patent Forward Citations

Loading…