The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Mar. 21, 2018
Applicant:
Sumitomo Heavy Industries, Ltd., Tokyo, JP;
Inventor:
Naoki Wakabayashi, Kanagawa, JP;
Assignee:
SUMITOMO HEAVY INDUSTRIES, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/268 (2006.01); H01L 21/04 (2006.01); B23K 26/064 (2014.01); C30B 33/02 (2006.01); H01L 21/20 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); B23K 26/352 (2014.01);
U.S. Cl.
CPC ...
H01L 21/268 (2013.01); B23K 26/064 (2015.10); C30B 33/02 (2013.01); H01L 21/046 (2013.01); H01L 21/2026 (2013.01); H01L 21/265 (2013.01); H01L 21/324 (2013.01); B23K 26/352 (2015.10); H01L 29/1608 (2013.01); H01L 29/66333 (2013.01);
Abstract
An annealing object is prepared in which an absorbing film formed of a metal is formed on a surface of a wafer formed of silicon carbide into which an unactivated dopant is implanted. The dopant is activated by causing a laser beam to be incident into the absorbing film. A power density of the laser beam in a surface of the annealing object is a value with which a silicide reaction is caused to occur between the absorbing film and the wafer and a metal silicide film formed by the silicide reaction is evaporated.