The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Mar. 15, 2016
Applicant:
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Inventors:
Daichi Nishikawa, Sakai, JP;
Takeshi Hirase, Sakai, JP;
Tetsuya Okamoto, Sakai, JP;
Tohru Senoo, Sakai, JP;
Tohru Sonoda, Sakai, JP;
Seiji Fujiwara, Sakai, JP;
Mamoru Ishida, Sakai, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01); B08B 5/02 (2006.01); B08B 7/00 (2006.01); H05H 1/46 (2006.01); H01L 21/31 (2006.01); H01L 21/033 (2006.01); H01L 21/67 (2006.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01); H01J 37/00 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0206 (2013.01); B08B 5/02 (2013.01); B08B 7/00 (2013.01); H01J 37/00 (2013.01); H01J 37/32357 (2013.01); H01J 37/32715 (2013.01); H01J 37/32862 (2013.01); H01L 21/02 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31 (2013.01); H01L 21/67028 (2013.01); H01L 21/67103 (2013.01); H01L 21/67109 (2013.01); H01L 21/67248 (2013.01); H01L 21/6831 (2013.01); H01L 21/68785 (2013.01); H01L 51/5246 (2013.01); H01L 51/56 (2013.01); H01L 21/68742 (2013.01); H05H 1/46 (2013.01);
Abstract
The present invention provides a cleaning method by which it is possible to prevent deformation of a film formation mask (). While the film formation mask () disposed between a shower head () and a susceptor () within a chamber () is cooled, a cleaning gas made into plasma, which cleaning gas reacts with a reaction product () deposited on a surface of the film formation mask (), is blown on the film formation mask ().