The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Mar. 18, 2016
Applicant:

Hitachi, Ltd., Tokyo, JP;

Inventors:

Tetsufumi Kawamura, Tokyo, JP;

Misuzu Sagawa, Tokyo, JP;

Kazuki Watanabe, Tokyo, JP;

Keiji Watanabe, Tokyo, JP;

Shuntaro Machida, Tokyo, JP;

Nobuyuki Sugii, Tokyo, JP;

Daisuke Ryuzaki, Tokyo, JP;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/28 (2006.01); H01J 37/302 (2006.01); H01J 37/305 (2006.01); H01L 21/3065 (2006.01); H01L 21/66 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/28 (2013.01); B81C 1/00 (2013.01); H01J 37/3023 (2013.01); H01J 37/3056 (2013.01); H01L 21/3065 (2013.01); H01L 22/26 (2013.01); B81C 2201/0132 (2013.01); H01J 2237/30411 (2013.01); H01J 2237/31745 (2013.01); H01J 2237/31749 (2013.01);
Abstract

The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.


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