The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Feb. 01, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Myoung-Ki Ahn, Yongin-si, KR;
Gwang-Seon Byun, Yongin-si, KR;
Han-Saem Park, Seoul, KR;
Hyun-Koo Kwak, Suwon-si, KR;
Su-Bong Shon, Suwon-si, KR;
Ung-Keun Cho, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A method of analyzing lattice strain of a semiconductor device includes generating a spectrum image by performing a Fourier Transform on an image of a semiconductor device, providing a first hybrid mask filter t filter designed to select at least one peak frequency from the spectrum image, filtering the spectrum image using the first hybrid mask filter to generate a filtered spectrum image, and generating a first strain image by performing an inverse Fourier Transform on the filtered spectrum image.