The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Jan. 09, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jung Sunwoo, Seoul, KR;

Makoto Hirano, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 29/52 (2006.01); G06F 11/10 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0638 (2013.01); G06F 3/0619 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01); G06F 11/1068 (2013.01); G11C 29/52 (2013.01); G11C 2029/0409 (2013.01);
Abstract

A nonvolatile memory device includes a memory cell array including a plurality of first segments having a write data, and a plurality of second segments having a programmed information defining a programmed segment from the plurality of first segments. A randomizer is configured to randomize the write data. An error correction circuit is configured to perform an error correction operation on the write data. A control logic is configured to determine the programmed information from an address received from a memory controller, and to determine whether to operate the randomizer and the error correction circuit based on the determination of the programmed information during the program operation. A page buffer is configured to store the write data and the programmed information during the randomizing and the error correction operation.


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