The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Apr. 06, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); G03F 7/20 (2006.01); G03F 1/26 (2012.01); H01L 21/8234 (2006.01); H01L 21/66 (2006.01); H01L 29/66 (2006.01); G03F 1/36 (2012.01); G03F 1/44 (2012.01); G03F 1/84 (2012.01);
U.S. Cl.
CPC ...
G03F 7/70625 (2013.01); G03F 1/26 (2013.01); G03F 1/36 (2013.01); G03F 1/44 (2013.01); G03F 1/84 (2013.01); G03F 7/70683 (2013.01); H01L 21/823431 (2013.01); H01L 22/12 (2013.01); H01L 22/30 (2013.01); H01L 29/66795 (2013.01);
Abstract
Methods of inspecting photomasks are provided. A method of inspecting a photomask includes electronically inspecting a first mask pattern in a mask region of the photomask and refraining from electronically inspecting a separate second mask pattern in the mask region of the photomask. The first mask pattern includes a geometric feature that corresponds to at least a portion of the second mask pattern. Moreover, the mask region is outside of a scribe lane region of the photomask. Related methods of manufacturing photomasks and methods of manufacturing semiconductor devices are also provided.