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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10409162 B1

PDFFull Text
Date of Patent:
Sep. 10, 2019

Filed:

Aug. 28, 2015

Highly heat resistant polysilsesquioxane-based photosensitive resin composition

Applicant:

Ltc Co., Ltd, Gyeonggi-do, KR;

Inventors:

Jun Young Kim, Gyeonggi-do, KR;

Hwa Young Kim, Gyeonggi-do, KR;

Sang Hun Cho, Gyeonggi-do, KR;

Kwang Hyun Ryu, Gyeonggi-do, KR;

Ho Sung Choi, Gyeonggi-do, KR;

Assignee:

LTC CO., LTD., , KR;

Attorney:

Sheridan Ross P.C.

Primary Examiner:

John S Chu

Int. Cl.
CPC ...
G03F 7/023 (2006.01); G03F 7/075 (2006.01); C08G 77/04 (2006.01); G03F 7/004 (2006.01); G03F 7/039 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); H01L 27/32 (2006.01); G03F 7/038 (2006.01); G02F 1/1333 (2006.01); G02F 1/1362 (2006.01); C08G 77/14 (2006.01); C08G 77/18 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0233 (2013.01); C08G 77/04 (2013.01); G03F 7/0045 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/0757 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2002 (2013.01); G03F 7/322 (2013.01); H01L 27/3246 (2013.01); H01L 27/3258 (2013.01); C08G 77/14 (2013.01); C08G 77/18 (2013.01); G02F 1/133345 (2013.01); G02F 1/136227 (2013.01); G02F 2001/133357 (2013.01); G02F 2202/02 (2013.01); H01L 2227/323 (2013.01);
Abstract

The present invention relates to a highly heat resistant silsesquioxane-based photosensitive resin composition for a liquid crystal display device or an organic EL display device, and a positive resist insulating layer prepared therefrom, and in particular, to a silsesquioxane-based photosensitive resin composition having high heat resistance and a low dielectric property, capable of being used as an insulating layer forming a via hole of the thin film transistor (TFT), and simultaneously, capable of being used as an insulating layer for forming a bank pattern dividing pixels of an organic EL display device.

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