The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Aug. 10, 2016
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventor:

Yusuke Kasahara, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0002 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01);
Abstract

A pattern forming method includes forming a first film on a first layer and a second film on the first film. First and second concave portions are formed in the second film. A third film is formed in the concave portions and a fourth film comprising a polymer is formed on the third film. The fourth film can be processed to phase separate and form a pattern in at least the first opening. The pattern formed in the fourth film can be used in patterning films thereunder. A fifth film can be formed which covers the first concave portion and does not cover the second concave portion. The third film in the second concave portion and the first film under the second concave portion can be processed using the fifth film. The first layer can be patterned using the first, second, or third film as a mask.


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