The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Mar. 01, 2013
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Kookmin University Industry Academy Cooperation Foundation, Seongbuk-Gu, Seoul, KR;
Jihun Lim, Goyang-si, KR;
Byung Du Ahn, Hwaseong-si, KR;
Gun Hee Kim, Hwaseong-si, KR;
Junhyun Park, Suwon-si, KR;
Jehun Lee, Seoul, KR;
Jaewoo Park, Seongnam-si, KR;
Dae Hwan Kim, Seoul, KR;
Hyunkwang Jung, Seoul, KR;
Jaehyeong Kim, Seoul, KR;
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;
KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION, Seoul, KR;
Abstract
A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.