The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2019
Filed:
Jan. 08, 2018
Applicant:
Elenion Technologies, Llc, New York, NY (US);
Inventors:
Saeed Fathololoumi, San Gabriel, CA (US);
Yang Liu, Elmhurst, NY (US);
Yaojia Chen, Jersey City, NJ (US);
Assignee:
Elenion Technologies, LLC, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); G02B 6/32 (2006.01); G02B 6/12 (2006.01); H01L 31/0232 (2014.01);
U.S. Cl.
CPC ...
G02B 6/327 (2013.01); G02B 6/12 (2013.01); H01L 31/02327 (2013.01); H01L 31/18 (2013.01); G02B 2006/12126 (2013.01); G02B 2006/12176 (2013.01);
Abstract
The back reflection in photodiodes is caused by an abrupt index contrast between the input waveguide and the composite waveguide/light absorbing material. In order to improve the back reflection, it is proposed to introduce an angle between the waveguide and the leading edge of the light absorbing material. The angle will result in gradually changing the effective index between the index of the waveguide and the index of the composite section, and consequently lower the amount of light reflecting back.