The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Feb. 02, 2015
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Alfons Dehe, Reutlingen, DE;
Stefan Barzen, Munich, DE;
Wolfgang Friza, Villach, AT;
Wolfgang Klein, Zorneding, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); H04R 7/14 (2006.01); H04R 19/04 (2006.01); H04R 31/00 (2006.01); H04R 19/00 (2006.01);
U.S. Cl.
CPC ...
H04R 31/003 (2013.01); B81B 3/001 (2013.01); B81B 3/0072 (2013.01); H04R 7/14 (2013.01); H04R 19/005 (2013.01); H04R 19/04 (2013.01); B81B 2201/0257 (2013.01);
Abstract
In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.