The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Jan. 09, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Min Kyu Yang, Hwaseong-si, KR;
Seong Geon Park, Seongnam-si, KR;
Dong Jun Seong, Seongnam-si, KR;
Dong Ho Ahn, Hwaseong-si, KR;
Jung Moo Lee, Hwaseong-si, KR;
Seol Choi, Seoul, KR;
Hideki Horii, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.