The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Oct. 15, 2018
Applicant:
Arm Limited, Cambridge, GB;
Inventors:
Kimberly Gay Reid, Austin, TX (US);
Lucian Shifren, San Jose, CA (US);
Assignee:
Arm Limited, Cambridge, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/768 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/12 (2013.01); G11C 13/0007 (2013.01); H01L 21/76888 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/14 (2013.01); H01L 45/146 (2013.01); H01L 45/165 (2013.01); H01L 45/1608 (2013.01); H01L 45/1616 (2013.01); H01L 45/1625 (2013.01); H01L 45/1633 (2013.01); H01L 45/1641 (2013.01); G11C 2213/15 (2013.01); G11C 2213/33 (2013.01);
Abstract
Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a silicon-containing correlated electron material. In embodiments, processes are described for forming the silicon-containing correlated electron material. These processes may use comparatively lower temperatures as compared to those used for forming a correlated electron material comprising a transition metal oxide.