The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Mar. 07, 2017
University of Copenhagen, Copenhagen K, DK;
Peter Krogstrup, Copenhagen Ø, DK;
Charles M. Marcus, Copenhagen Ø, DK;
University of Copenhagen, , DK;
Abstract
The present disclosure relates to a device and method for forming efficient quantum devices, in particular quantum devices that have not been contaminated in ex-situ processes. In particular the presently disclosed method can be applied for manufacturing of a Josephson junction which is an element in a tunable superconducting qubit. One embodiment relates to a method for in-situ production of a barrier/gap in the surface layer(s) of an elongated nanostructure, the method comprising the steps of providing at least one elongated device nanostructure on a substrate in a vacuum chamber having at least one deposition source, providing at least one elongated shadow nanostructure in said vacuum chamber, and depositing at least a first facet layer on at least a part of the device nanostructure(s) and the shadow nanostructure(s) by means of said deposition source, wherein the deposition source, the device nanostructure and the shadow nanostructure during deposition are arranged such that the shadow nanostructure covers and forms a shadow mask on at least a part of the device nanostructure thereby forming a gap in the first facet layer deposited on the device nanostructure.