The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Nov. 28, 2016
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Aledia, Grenoble, FR;
Xin Zhang, Grenoble, FR;
Bruno-Jules Daudin, La Tronche, FR;
Bruno Gayral, Saint-Martin-le-Vinoux, FR;
Philippe Gilet, Teche, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
ALEDIA, Grenoble, FR;
Abstract
The invention relates to an optoelectronic device () comprising at least one three-dimensional semiconductor structure () extending along a longitudinal axis (Δ) substantially orthogonal to a plane of a substrate () on which same lies, and comprising: a first doped portion (), extending from one surface of the substrate () along the longitudinal axis (Δ); an active portion () comprising a passivation layer () and at least one quantum well () covered laterally by said passivation layer (), the quantum well () of the active portion () having a mean diameter greater than that of said first doped portion (), said active portion () extending from the first doped portion () along the longitudinal axis (Δ); and a second doped portion (), extending from the active portion () along the longitudinal axis (Δ). The invention is characterized in that the device comprises a plurality of three-dimensional semiconductor structures () extending substantially in parallel with one another, the active portions () of which are in mutual contact.