The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
May. 20, 2015
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Tze-Chiang Chen, Yorktown Heights, NY (US);
Augustin J. Hong, White Plains, NY (US);
Jeehwan Kim, Los Angeles, CA (US);
Devendra K. Sadana, Pleasantville, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/077 (2012.01); C23C 16/50 (2006.01); H01L 31/20 (2006.01); H01L 21/02 (2006.01); C23C 16/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/0368 (2006.01); H01L 31/0376 (2006.01); H01L 31/0392 (2006.01); C23C 16/455 (2006.01); C23C 16/515 (2006.01); H01L 31/0224 (2006.01); H01L 31/065 (2012.01); H01L 31/18 (2006.01); H01L 31/056 (2014.01);
U.S. Cl.
CPC ...
H01L 31/077 (2013.01); C23C 16/0272 (2013.01); C23C 16/45523 (2013.01); C23C 16/45557 (2013.01); C23C 16/50 (2013.01); C23C 16/515 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 31/02167 (2013.01); H01L 31/022466 (2013.01); H01L 31/022475 (2013.01); H01L 31/022483 (2013.01); H01L 31/03682 (2013.01); H01L 31/03687 (2013.01); H01L 31/03762 (2013.01); H01L 31/03921 (2013.01); H01L 31/056 (2014.12); H01L 31/065 (2013.01); H01L 31/1816 (2013.01); H01L 31/20 (2013.01); Y02E 10/52 (2013.01); Y02E 10/546 (2013.01); Y02E 10/548 (2013.01);
Abstract
A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.