The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Nov. 20, 2017
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, Guangdong, CN;
Xingyu Zhou, Guangdong, CN;
Jangsoon Im, Guangdong, CN;
Abstract
The present disclosure provides a top-gate self-aligned metal oxide semiconductor TFT and a manufacturing method thereof. By providing a light-shielding layer below an active layer to protect the active layer from light irradiation and prevent the TFT from generating a negative threshold voltage drift phenomenon. Further, by connecting the light-shielding layer to the source, a stable voltage is generated on the light-shielding layer to avoid the floating gate effect, so as to improve the working stability of the TFT effectively. The top-gate self-aligned metal oxide semiconductor TFT produced by the method of the present disclosure does not generate negative threshold voltage drift phenomenon and floating gate effect, resulting in good working stability.