The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Dec. 15, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Inventor:
Jong Su Kim, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 23/535 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 27/092 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/45 (2013.01); H01L 29/6656 (2013.01); H01L 29/66666 (2013.01); H01L 21/0276 (2013.01); H01L 21/31053 (2013.01); H01L 21/31116 (2013.01); H01L 21/823885 (2013.01); H01L 27/092 (2013.01); H01L 29/6653 (2013.01);
Abstract
A semiconductor device includes a substrate, and a first source/drain region formed on the substrate. The semiconductor device further includes a channel formed on the first source/drain region, and a second source/drain region formed on the channel. The semiconductor device also includes a gate electrode formed on an external surface of the channel, and a metal pad formed on the substrate. The height of an upper surface of the metal pad is the same as the length of an upper surface of the gate electrode.