The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Dec. 01, 2017
Hyundai Motor Company, Seoul, KR;
Kia Motors Corporation, Seoul, KR;
Dae Hwan Chun, Gyeonggi-do, KR;
Hyundai Motor Company, Seoul, KR;
Kia Motors Corporation, Seoul, KR;
Abstract
A semiconductor device includes: an n+ type of silicon carbide substrate, an n− type of layer, first trenches, a p type of region, a p+ type of region, an n+ type of region, a gate electrode, a source electrode, and a drain electrode. The semiconductor device may include a plurality of unit cells, wherein one of the plurality of unit cells may include a contact portion at which the source electrode and the p+ type of region contact each other, an outer portion disposed at upper and lower portions of the contact portion in a plan view, and a connection portion connecting the contact portion to the outer portion, a width between the first trenches horizontally adjacent in the plan view in the contact portion is equal to a width between the first trenches horizontally adjacent in the plan view in the outer portion, and a width between the first trenches horizontally adjacent in the plan view in the connection portion is less than a width between the first trenches horizontally adjacent in the plan view in the contact portion.